| PART |
Description |
Maker |
| IDT71P74104S167BQ IDT71P74104S200BQ IDT71P74104S25 |
1.8V 512K x 36 QDR II PipeLined SRAM
1.8V 2M x 9 QDR II PipeLined SRAM
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 2M x 8 QDR II Pipelined SRAM
18Mb Pipelined QDR II SRAM Burst of 4
|
IDT
http://
|
| 71P72604S167BQGI 71P72604S200BQG8 71P72604S167BQG8 |
512K X 36 QDR SRAM, 0.5 ns, PBGA165 13 X 15 MM, GREEN, FPBGA-165
512K X 36 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1 MM PITCH, GREEN, FBGA-165
512K X 36 QDR SRAM, 0.5 ns, PBGA165 13 X 15 MM, 1 MM PITCH, GREEN, FBGA-165
512K X 36 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, GREEN, FPBGA-165
|
Integrated Device Technology, Inc.
|
| CY7C1314BV18-167BZXC |
18-Mbit QDRII SRAM 2 Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| K7R643684M07 K7R641884M K7R641884M-FC200 K7R641884 |
2Mx36 & 4Mx18 QDR II b4 SRAM
4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| CY7C1911BV18-278BZXC CY7C1911BV18-278BZXI CY7C1911 |
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 8 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 1M X 18 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| AS7C33512PFS32_36A AS7C33512PFS36A-166TQIN AS7C335 |
3.3V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.8 ns, PQFP100
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM
4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp)
4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位（为512k × 8），5V的异步SRAM
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| WPS512K8VB-15RJI WPS512K8VB-15RJM WPS512K8VB-17RJI |
3.3V 512K x 8 SRAM, 15ns
3.3V 512K x 8 SRAM, 17ns
3.3V 512K x 8 SRAM, 20ns
|
White Electronic Designs
|
| CY7C1312BV18-167BZXC CY7C1310BV18-167BZXC CY7C1314 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1M X 18 QDR SRAM, 0.5 ns, PBGA165
18-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
